Issue 43, 2013
From the journal:

Journal of Materials Chemistry A

Thermoelectric characteristics of (Zn,Al)O/hydroquinone superlattices

Tommi Tynell,a   Ichiro Terasaki,b   Hisao Yamauchia  and  Maarit Karppinen*a  

* Corresponding authors

a Department of Chemistry, Aalto University, FI-00076 Aalto, Finland
E-mail: maarit.karppinen@aalto.fi
Fax: +358 9 462 373
Tel: +358 50 384 1726

b Department of Physics, Nagoya University, Nagoya 464-8602, Japan
E-mail: terra@cc.nagoya-u.ac.jp
Fax: +81 52 789 5255
Tel: +81 52 789 5255

Abstract

Thin ZnO layers doped with aluminum and interspersed with regularly repeating single layers of organic molecules are deposited by a combined atomic layer deposition (ALD) and molecular layer deposition (MLD) method at 220 °C using diethyl zinc, trimethyl aluminum, water and hydroquinone (HQ) as precursors. Hydroquinone is found to form distinct layers within the (Zn,Al)O framework such that clear inorganic–organic superlattice structures are realized. Aluminum doping efficiently offsets the decrease in carrier concentration caused by the organic layers, and enables enhanced electrical conductivities for the co-doped (Al plus HQ) thin films. Since superlattice structures in general are known to be highly beneficial in blocking the phonon transport in different materials, our ALD/MLD grown (Zn,Al)O:HQ thin films possess a lot of promise for new types of thermoelectrics.

Graphical abstract: Thermoelectric characteristics of (Zn,Al)O/hydroquinone superlattices

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Article information

DOI
https://doi.org/10.1039/C3TA12909H
Article type
Paper
Submitted
26 Jul 2013
Accepted
10 Sep 2013
First published
11 Sep 2013

J. Mater. Chem. A, 2013,1, 13619-13624

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Thermoelectric characteristics of (Zn,Al)O/hydroquinone superlattices

T. Tynell, I. Terasaki, H. Yamauchi and M. Karppinen, J. Mater. Chem. A, 2013, 1, 13619 DOI: 10.1039/C3TA12909H

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