Issue 40, 2014
From the journal:

RSC Advances

Effect of ZnS buffer layers in ZnO/ZnS/CdS nanorod array photoelectrode on the photoelectrochemical performance†

L. P. Wu,a   Y. L. Zhang,a   L. Z. Long,a   C. P. Cenb  and  X. J. Li*a  

* Corresponding authors

a Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China
E-mail: lixj@ms.giec.ac.cn
Fax: +86 20 87057677
Tel: +86 20 87057781

b The Key Laboratory of Water and Air Pollution Control of Guangdong Province, South China Institute of Environmental Science, Ministry of Environmental Protection, Guangzhou 510640, China

Abstract

ZnO/CdS/ZnS and ZnO/ZnS/CdS nanorod array photoelectrodes were constructed and fabricated by an alternative chemical bath deposition of CdS and ZnS layers onto the surface of the ZnO nanorod array. The photoelectrochemical performances of composite photoelectrodes were investigated, and the action mechanism of ZnS buffer layers was also considered. The results show that the ZnO/ZnS/CdS nanorod array photoelectrode possesses enhanced hydrogen production efficiency. The enhancement may be attributed to the ZnS buffer layers, which are advantageous in the separation and transportation of photogenerated electron–hole pairs in ZnO/ZnS/CdS nanorod array photoelectrodes.

Graphical abstract: Effect of ZnS buffer layers in ZnO/ZnS/CdS nanorod array photoelectrode on the photoelectrochemical performance

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Article information

DOI
https://doi.org/10.1039/C4RA00005F
Article type
Paper
Submitted
01 Jan 2014
Accepted
17 Apr 2014
First published
17 Apr 2014

RSC Adv., 2014,4, 20716-20721

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Effect of ZnS buffer layers in ZnO/ZnS/CdS nanorod array photoelectrode on the photoelectrochemical performance

L. P. Wu, Y. L. Zhang, L. Z. Long, C. P. Cen and X. J. Li, RSC Adv., 2014, 4, 20716 DOI: 10.1039/C4RA00005F

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