Issue 53, 2014
From the journal:

RSC Advances

Reduced dielectric loss in Ba0.95Sr0.05(Fe0.5Nb0.5)O3 thin film grown by pulsed laser deposition

Piyush Kumar Patel,a   K. L. Yadav*a  and  Gurpreet Kaurb  

* Corresponding authors

a Smart Materials Research Laboratory, Department of Physics, Indian Institute of Technology, Roorkee-247667, India
E-mail: klyadav35@yahoo.com
Fax: +91 1332 273560
Tel: +91 1332 285744

b High Power Laser Lab, Department of Physics, Indian Institute of Technology, Roorkee-247667, India

Abstract

Thin films of Ba0.95Sr0.05(Fe0.5Nb0.5)O3 ceramic on ITO-coated glass substrate were prepared by pulsed laser deposition technique. Deposited films were annealed at 500 °C for 1 h in vacuum. Structural, dielectric and optical properties were studied at different substrate temperature. Thin films were analyzed using low angle X-ray diffraction. All thin films have a single-phase perovskite structure. AFM analysis showed the uniform and nanosize grains in all samples. At room temperature, high dielectric constant (∼4037) with low dielectric loss (0.04) was obtained at 1 kHz frequency. The optical band gap was found to be 2.60 eV for 550 °C deposited film.

Graphical abstract: Reduced dielectric loss in Ba0.95Sr0.05(Fe0.5Nb0.5)O3 thin film grown by pulsed laser deposition

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Article information

DOI
https://doi.org/10.1039/C4RA03502J
Article type
Paper
Submitted
17 Apr 2014
Accepted
05 Jun 2014
First published
05 Jun 2014

RSC Adv., 2014,4, 28056-28061

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Reduced dielectric loss in Ba0.95Sr0.05(Fe0.5Nb0.5)O3 thin film grown by pulsed laser deposition

P. K. Patel, K. L. Yadav and G. Kaur, RSC Adv., 2014, 4, 28056 DOI: 10.1039/C4RA03502J

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