Simple method to determine series resistance and its temperature dependence in AIAs/GaAs/AIAs double barrier resonant tunnelling diodes
The Letter presents a simple empirical method to quickly determine the series resistance RS of AlAs/GaAs/AIAs double barrier resonant tunnelling diodes, and its temperature dependence over the temperature range 198–295 K. At high voltage biases, the quantum well diode current-voltage characteristics were modelled with the empirical expression ID ≃ exp {q(VA − ID · Rs)/KT}. From this current–voltage relationship, Rs can be extracted from plots of the total resistance dVAdID against 1/ID in the limit of 1/ID→0. The results showed that Rs decreased with temperature from 5.3 Ω at 198 K to 4.7Ω at 295 K. Rs values extracted using the Nelder–Meade simplex algorithm agreed with those from the dVAdID against 1/ID technique to within 10%.
