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Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure

Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure

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An index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated. A record threshold current of 70 µA was achieved with a 5 µm-diameter core device. The proposed structure provides strong electrical and optical confinements. Also a reduction in nonradiative recombination and an improvement in the thermal resistance can be expected.

Inspec keywords: surface emitting lasers; aluminium compounds; III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; electron-hole recombination

Other keywords: vertical-cavity surface-emitting laser; nonradiative recombination; thermal resistance; threshold current; InGaAs-GaAlAs; optical confinement; 70 muA; 5 micron; native oxide confinement structure; index-guided laser

Subjects: Lasing action in semiconductors; Laser resonators and cavities; Semiconductor lasers; Design of specific laser systems; Laser resonators and cavities; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)

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