Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

100 h II-VI blue-green laser diode

100 h II-VI blue-green laser diode

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

By reducing the dark-spot density to <3 × 103 cm-2, device lifetime exceeding 100 h has been obtained for a ZnCdSe/ZnSSe/ZnMgSSe single quantum well separate-confinement heterostructure laser diode (LD) under room temperature continuous-wave operation with a constant light output power of 1 mW. The threshold current density is 533 A/cm2 and the lasing wavelength is 514.7 nm. Considering the dark-spot density, we have concluded that the failure of this LD is not caused by degradation from macroscopic defects such as stacking faults, but by recombination enhanced defect reaction.

References

    1. 1)
      • M. Ikeda , A. Ishibashi , Y. Mori . Molecular beam epitaxial growth ofZnMgSSe and its application to blue and green laser diodes. J. Vac. Sci. Technol. A , 3 , 683 - 689
    2. 2)
      • S.L. Chuang , M. Ukita , S. Kijima , S. Taniguchi , A. Ishibashi . Universal curves for optical output degradation of II-VI light emittingdiodes due to carrier-recombination enhanced defect generation. Phys. Rev. Lett.
    3. 3)
      • Ishibashi, A.: `II-VI blue-green light emitters', Mo-1, 7th Int. Conf. II-VI Compounds and Devices, 13–18 August 1995, Heriot-Watt UniversityEdinburgh, Scotland, UK.
    4. 4)
      • S. Tomiya , E. Morita , M. Ukita , H. Okuyama , S. Itoh , K. Nakano , A. Ishibashi . Structural study of defects induced during current injection toII-VI blue light emitter. Appl. Phys. Lett. , 1208 - 1210
    5. 5)
      • L.H. Kuo , L. Salamanca-Riba , B.J. Wu , G.M. Haugen , J.M. DePuydt , G. Hofler , H. Cheng . Generation of degradation defects, stacking faults,and misfit dislocations in ZnSe-based films grown on GaAs. J. Vac. Sci. Technol. B , 4
    6. 6)
      • M. Hovinen , J. Ding , A. Salokatve , A.V. Nurmikko , G.C. Hua , D.C. Grillo , L. He , J. Han , M. Ringle , R.L. Gunshor . On degradation of ZnSe-basedblue-green diode lasers. J. Appl. Phys. , 4150 - 4152
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19960415
Loading

Related content

content/journals/10.1049/el_19960415
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address