Vertical cavity lasers based on vertically coupled quantum dots
Vertical cavity lasers based on vertically coupled quantum dots
- Author(s): J.A. Lott ; N.N. Ledentsov ; V.M. Ustinov ; A.Yu. Egorov ; A.E. Zhukov ; P.S. Kop'ev ; Zh.I. Alferov ; D. Bimberg
- DOI: 10.1049/el:19970785
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- Author(s): J.A. Lott 1 ; N.N. Ledentsov 2 ; V.M. Ustinov 2 ; A.Yu. Egorov 2 ; A.E. Zhukov 2 ; P.S. Kop'ev 2 ; Zh.I. Alferov 2 ; D. Bimberg 3
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View affiliations
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Affiliations:
1: Department of Electrical and Computer Engineering, Air Force Institute of Technology, USA
2: Department of Electrical and Computer Engineering, Abraham F. Ioffe Physical Technical Institute, Saint Petersburg, Russia
3: Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany
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Affiliations:
1: Department of Electrical and Computer Engineering, Air Force Institute of Technology, USA
- Source:
Volume 33, Issue 13,
19 June 1997,
p.
1150 – 1151
DOI: 10.1049/el:19970785 , Print ISSN 0013-5194, Online ISSN 1350-911X
Ground state lasing is reported for vertical cavity lasers containing three-period InGaAs/GaAs vertically coupled quantum dot active regions. The structures include selectively oxidised AlO current apertures and AlO/GaAs reflectors. Experimental devices emitting near 1.0 µm operate continuous wave at 20°C with threshold currents <200 µA and peak power conversion efficiencies exceeding 10%.
Inspec keywords: surface emitting lasers; laser cavity resonators; distributed Bragg reflector lasers; gallium arsenide; III-V semiconductors; semiconductor quantum dots; quantum well lasers; indium compounds
Other keywords:
Subjects: Laser resonators and cavities; Laser resonators and cavities; Lasing action in semiconductors; Semiconductor lasers; Design of specific laser systems
References
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