Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Demonstration of 140 A, 800 V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures

Demonstration of 140 A, 800 V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

DC test results of MPS diodes using multi-step junction termination extension (MJTE) designs are presented. The measurements include reverse leakage current, breakdown, and forward voltage drop. The MJTE design allows full utilisation of the large breakdown properties of SiC. Packaged diodes, containing multiple MPS cells with MJTE designs, also are described.

Inspec keywords: p-i-n diodes; silicon compounds; semiconductor device breakdown; power semiconductor diodes; semiconductor device packaging; leakage currents; wide band gap semiconductors; Schottky diodes; semiconductor device testing

Other keywords: forward voltage drop; 4H-SiC pin/Schottky barrier diodes; 800 V; reverse leakage current; 140 A; packaged diodes; DC test results; SiC; multi-step junction termination extension structures; MPS diodes; breakdown; multiple MPS cells

Subjects: Power semiconductor devices; Junction and barrier diodes; Testing; Packaging; Product packaging

References

    1. 1)
      • J. Baliga . Analysis of a high voltage merged p-i-n/Schottky(MPS) rectifier. IEEE Electron Device Lett. , 407 - 409
    2. 2)
      • X. Li , K. Tone , L. Cao , P. Alexandrov , L. Fursin , J. Zhao . Theoretical and experimental study of 4H-SiC junction edge termination. Mater. Sci. Forum , 1375 - 1378
    3. 3)
      • K. Tone , J.H. Zhao , M. Weiner , M. Pan . Fabrication and testing of 1,000 V – 60 A MPS diodes in an inductivehalf-bridge circuit. Mater. Sci. Forum , 1187 - 1190
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010777
Loading

Related content

content/journals/10.1049/el_20010777
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address