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SiO2/AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax/fT of 40/24 GHz

SiO2/AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax/fT of 40/24 GHz

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The performance of SiO2/AlGaN/GaN MOSHFETs is described. The C–V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO2. The devices exhibited gate leakage current of 5×10−10 A/mm. Small-signal RF characterisation of 0.7 µm gate length devices yielded an fT of 24 GHz and an fmax of 40 GHz, which are comparable to those typical for state-of-the-art AlGaN/GaN HFETs.

Inspec keywords: nanotechnology; junction gate field effect transistors; silicon compounds; plasma CVD; gallium compounds; III-V semiconductors; MOSFET; carrier density; leakage currents; millimetre wave transistors; aluminium compounds; microwave transistors

Other keywords: 40 GHz; gate leakage current; small-signal RF characterisation; 24 GHz; MOSHFET; SiO2-AlGaN-GaN; C-V measurements; 0.7 micron; 12 nm; sheet carrier density

Subjects: Nanometre-scale semiconductor fabrication technology; Chemical vapour deposition; Insulated gate field effect transistors; Solid-state microwave circuits and devices; Other field effect devices

References

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