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Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon

Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon

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  • Author(s): Z. Mi 1 ; J. Yang 1 ; P. Bhattacharya 1 ; D.L. Huffaker 2
    • View affiliations
    • Affiliations: 1: Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, USA
      2: Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, Center for High Technology Materials, Albuquerque, USA
  • Source: Volume 42, Issue 2, 19 January 2006, p. 121 – 123
    DOI:  10.1049/el:20063582 , Print ISSN 0013-5194, Online ISSN 1350-911X
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The use of multiple layers of self-organised InAs quantum dots as a very effective dislocation filter is demonstrated. In0.5Ga0.5As/GaAs quantum dot lasers grown directly on silicon substrates with the InAs quantum dot buffer layer exhibit substantially reduced threshold currents (Jth∼900 A/cm2), compared to devices grown on silicon without the dot buffer layer (Jth≥1500 A/cm2).

Inspec keywords: self-assembly; gallium arsenide; buffer layers; silicon; indium compounds; quantum dot lasers; multilayers

Other keywords: dislocation filters; lasers on silicon; self organised quantum dots; buffer layer; In0.5Ga0.5As-GaAs; quantum dot lasers

Subjects: Thin film growth, structure, and epitaxy; Low-dimensional structures: growth, structure and nonelectronic properties; Semiconductor lasers; Lasing action in semiconductors

References

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      • H. Jiang , J. Singh . Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: an eight-band study. J. Appl. Phys. , 4696 - 4701
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      • H.Y. Liu . Improved performance of 1.3 µm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. Appl. Phys. Lett. , 704 - 706
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