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Source–drain follower for monolithically integrated sensor array

Source–drain follower for monolithically integrated sensor array

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A source–drain follower has been designed and implemented in 1.2 µm standard CMOS technology. The circuit acts as a voltage follower, in which a sensing transistor is operated at fixed gate–source and gate–drain voltages, and operates at 10 nW with 10 mV accuracy in a 24×65 µm active area.

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