Three-dimensional integration of silicon-on-insulator RF amplifier
Three-dimensional integration of silicon-on-insulator RF amplifier
- Author(s): C.L. Chen ; C.K. Chen ; D.-R. Yost ; J.M. Knecht ; P.W. Wyatt ; J.A. Burns ; K. Warner ; P.M. Gouker ; P. Healey ; B. Wheeler ; C.L. Keast
- DOI: 10.1049/el:20080661
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- Author(s): C.L. Chen 1 ; C.K. Chen 1 ; D.-R. Yost 1 ; J.M. Knecht 1 ; P.W. Wyatt 1 ; J.A. Burns 1 ; K. Warner 1 ; P.M. Gouker 1 ; P. Healey 1 ; B. Wheeler 1 ; C.L. Keast 1
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View affiliations
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Affiliations:
1: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, USA
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Affiliations:
1: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, USA
- Source:
Volume 44, Issue 12,
05 June 2008,
p.
746 – 747
DOI: 10.1049/el:20080661 , Print ISSN 0013-5194, Online ISSN 1350-911X
An RF amplifier implemented by wafer-scale three-dimensional integration of three completely fabricated silicon-on-insulator wafers is demonstrated. The MOSFETs are on the top and bottom tier with middle-tier matching circuits. Measured amplifier performance agrees well with simulation and the footprint is approximately 40% smaller than the conventional 2D layout.
Inspec keywords: radiofrequency integrated circuits; radiofrequency amplifiers; wafer-scale integration; silicon-on-insulator; MOSFET; CMOS digital integrated circuits
Other keywords:
Subjects: Insulated gate field effect transistors; Amplifiers; CMOS integrated circuits; Microwave integrated circuits
References
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