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2.5 dB NF 3.1–10.6 GHz CMOS UWB LNA with small group-delay variation

2.5 dB NF 3.1–10.6 GHz CMOS UWB LNA with small group-delay variation

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A 3.1–10.6 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase linearity property (group-delay variation is only ±16.7 ps across the whole band) using standard 0.13 µm CMOS technology is reported. To achieve high and flat gain and small group-delay variation at the same time, the inductive peaking technique is adopted in the output stage for bandwidth enhancement. The UWB LNA achieved input return loss (S11) of −17.5 to −33.6 dB, output return loss (S22) of −14.4 to −16.3 dB, flat forward gain (S21) of 7.92±0.23 dB, and reverse isolation (S12) of −25.8 to −41.9 dB over the 3.1–10.6 GHz band of interest. A state-of-the-art noise figure (NF) of 2.5 dB was achieved at 10.5 GHz.

References

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      • Y. Park , C.H. Lee , J.D. Cressler , J. Laskar . Theoretical analysis of a low dispersion SiGe LNA for ultra-wideband applications. IEEE Microw. Wirel. Compon. Lett. , 9 , 517 - 519
    2. 2)
    3. 3)
      • Li, Q., Zhang, Y.P., Chang, J.S.: `An inductorless low-noise amplifier with noise cancellation for UWB receiver front-end', Proc. IEEE Asian Solid-State Circuits Conf., 2006, Hangzhou, China, p. 267–270.
    4. 4)
      • Y. Lu , K.S. Yeo , A. Cabuk , J. Ma , M.A. Do , Z. Lu . A novel CMOS low noise amplifier design for 3.1-to-10.6-GHz ultra-wide-band wireless receiver. IEEE Trans. Circuits Syst. I: Reg. Pprs. , 8 , 1683 - 1692
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