Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

0.07 mm2, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

0.07 mm2, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

  • Author(s): Y. Chen 1 ; P.-I. Mak 2 ; L. Zhang 1 ; Y. Wang 1
    • View affiliations
    • Affiliations: 1: Institute of Microelectronics, Tsinghua University, Beijing, People's Republic of China
      2: Faculty of Science and Technology and State-Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Macau, People's Republic of China
  • Source: Volume 48, Issue 10, 10 May 2012, p. 552 – 554
    DOI:  10.1049/el.2012.0579 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Engineering and Technology
Published

A highly-transistorised bandpass filter (BPF) using a source-follower-based (SFB) resonator is proposed. It benefits from the advantageous properties of the source follower (e.g. no parasitic pole, linear VGS I/O relationship, high-input and low-output impedances), while combining it with a compact and low-power grounded differential active inductor to synthesise the complex poles. Fabricated in 90 nm CMOS, a fourth-order 75 MHz-IF BPF prototype merging two such SFB resonators measures a 10 MHz bandwidth at 2 mW of power. The die size is merely 0.07 mm2.

Inspec keywords: inductors; resonators; band-pass filters; CMOS integrated circuits

Other keywords: bandwidth 10 MHz; power 2 mW; SFB resonator; IF; size 90 nm; frequency 75 MHz; fourth-order BPF; CMOS; source-follower-based resonator; highly-transistorised bandpass filter; low-power grounded differential active inductor

Subjects: Inductors and transformers; CMOS integrated circuits; Filters and other networks

References

    1. 1)
      • H.L. Thai , H.-H. Nguyen , H.-N. Nguyen , H.-S. Cho , J.-S. Lee , S.-G. Lee . An IF bandpass filter based on a low distortion transconductor. IEEE J. Solid-State Circuits , 11 , 2250 - 2261
    2. 2)
      • Andreani, P., Mattisson, S.: `A 100 MHz CMOS gm-C bandpass filter', Proc. 25th European Solid-State Circuits Conf., (ESSCIRC '99), September 1999, Duisburg, Germany, p. 374–377.
    3. 3)
      • Elmala, M., Carlton, B., Bishop, R., Soumyanath, K.: `A 1.4 V, 13.5 mW, 10/100 MHz 6th order elliptic filter/VGA with DC-offset correction in 90 nm CMOS [WLAN applications]', 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symp. Dig. Pprs., June 2005, Long Beach, CA, USA, p. 189–192.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2012.0579
Loading

Related content

content/journals/10.1049/el.2012.0579
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address