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Microwave noise in AlGaN/GaN channels

Microwave noise in AlGaN/GaN channels

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Recent investigation of microwave noise of nominally undoped AlGaN/GaN channels is reviewed. The noise is agitated in a two-dimensional electron gas by an electric field applied in the plane of electron confinement. The experimental results are compared with those of Monte Carlo simulation and with simple semi-empirical formulas. The importance of hot-phonon effects is emphasised.

Inspec keywords: aluminium compounds; microwave devices; gallium compounds; semiconductor device noise; two-dimensional electron gas; III-V semiconductors

Other keywords: microwave noise; hot-phonon effects; nominally undoped AlGaN/GaN channels; Monte Carlo simulation; electric fields; AlGaN-GaN; 2D electron gas; electron confinement

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Microwave circuits and devices

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