Structural and electrical characteristics of chemical vapor deposited (CVD) diamond films have been studied as a function of film thickness. The samples comprise a set of codeposited, nominally undoped diamond films with average grain size on the growth surface increasing linearly with the film thickness. Raman scattering analysis reveals a decrease of nondiamond phase and intragrain defects with increasing film thickness. Temperature dependent dc conductivity results indicate that, as the film thickness increases, the Fermi level moves towards the valence band. There is a corresponding decrease in the density of states at the Fermi level, as deduced from the space-charge-limited current in the bulk of the samples. The spatial variation in the density of states through the material closely reflects the changes observed in the structural and electrical properties of the films. Such characteristic has the implication on the application of CVD diamond in the area of electronics.
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15 May 2001
Research Article|
May 15 2001
Thickness dependence of density of gap states in diamond films studied using space-charge-limited current
Bo Gan;
Bo Gan
Microelectronics Center, Nanyang Technological University, Singapore 639798
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J. Ahn;
J. Ahn
Microelectronics Center, Nanyang Technological University, Singapore 639798
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Rusli;
Rusli
Microelectronics Center, Nanyang Technological University, Singapore 639798
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Qing Zhang;
Qing Zhang
Microelectronics Center, Nanyang Technological University, Singapore 639798
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S. F. Yoon;
S. F. Yoon
Microelectronics Center, Nanyang Technological University, Singapore 639798
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V. A. Ligatchev;
V. A. Ligatchev
Microelectronics Center, Nanyang Technological University, Singapore 639798
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J. Yu;
J. Yu
Microelectronics Center, Nanyang Technological University, Singapore 639798
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K. Chew;
K. Chew
Microelectronics Center, Nanyang Technological University, Singapore 639798
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Q.-F. Huang
Q.-F. Huang
Microelectronics Center, Nanyang Technological University, Singapore 639798
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J. Appl. Phys. 89, 5747–5753 (2001)
Article history
Received:
October 12 2000
Accepted:
February 08 2001
Citation
Bo Gan, J. Ahn, Rusli, Qing Zhang, S. F. Yoon, V. A. Ligatchev, J. Yu, K. Chew, Q.-F. Huang; Thickness dependence of density of gap states in diamond films studied using space-charge-limited current. J. Appl. Phys. 15 May 2001; 89 (10): 5747–5753. https://doi.org/10.1063/1.1360222
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