We fabricated pentacene field-effect transistors with planar-type double-gate structures, where the top- and bottom-gate electrodes can independently apply voltage biases to channel layers. The threshold voltage of organic transistors is changed systematically in a wide range from when the voltage bias of the top-gate electrode is changed from . The mobility in the linear regime is almost constant at various voltage biases of the top-gate electrode and the on/off ratio is .
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For electronic interconnections, a -laser drilling machine are used to make via-holes of parylene on source and drain electrodes and polyimide on bottom-gate electrode, and gold-pads connected to each electrode through via-holes are deposited, as well as top-gate electrodes.
FETs with the different top-gate electrodes are manufactured simultaneously on the same base films so that the other structural parameters are exactly the same as the FET used in the measurement on Figs. 2 and 3.
