Analysis for crystal structure of $Bi(Fe,Sc)O3$ thin films and their electrical properties

Thin films of $Bi(Fe1−xScx)O3$ (BFSO) system were fabricated on $(111)Pt∕TiO2∕SiO2∕(100)Si$ substrates by chemical solution deposition to improve the electrical resistivity by substituting electrically unstable $Fe3+$ cations for stable $Sc3+$ cations. A single phase of perovskite was obtained in the range of $x=0–0.30$⁠, in which selective replacement of $Fe3+$ and $Sc3+$ was confirmed in $x=0–0.15$ by using Raman measurement. The leakage current density of the BFSO films was reduced by increasing $x$⁠. A well-saturated polarization–electric field hysteresis loop was obtained for BFSO films with $x=0.15$⁠, showing remanent polarization of approximately $35μC∕cm2$⁠.