Abstract
The electro-optic and dielectric constants of single crystals of rubidium dihydrogen arsenate grown in H2O, and of rubidium dideuterium arsenate grown in D2O, have been measured. On deuteration the relative dielectric constant K33 is increased from 28·5 to 42·5 and K11 is increased from 54·5 to 71·5 at 25°C. The half-wave retardation voltage Vλ/2, measured at 500 nm is decreased from 3·8 kv to 3 kv and the electro-optic constant r63 is increased from 16·7×10−10 cm v−1 to 21·6×10−10 cm v−1 on deuteration. The loss tangent tan δ33, measured at 1 kHz and at 25°C, is about 2·6 for D-RbDA and 5·2 for RbDA. The specific resistivity ρ33 for RbDA is 3·4×106 Ω cm and that for D-RbDA is 3·6×107 Ω cm, measured at 25°C. The input power requirement using these crystals in an electro-optic modulator is compared to that of KDP.
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