Electrical characterization of rapidly annealed Ni and Pd/n-InP Schottky diodes

The effects of rapid thermal annealing on the electrical characteristics of Ni and Pd contacts on n-InP are investigated. Results show that annealing at temperatures up to 450 degrees C and for durations up to 100 s has little effect on the electrical parameters of these contacts. Contacts annealed at 600 degrees C showed some degradation. Contacts annealed at 450 degrees C and 600 degrees C for 100 s showed an aging effect. Different reaction processes at the interface and formation of an InP surface layer with no stoichiometry are used to explain the observations.