Fabrication andstructure of an opal-gallium nitride nanocomposite

V Yu Davydov; R E Dunin-Borkovski; V G Golubev; J L Hutchison; N F Kartenko; D A Kurdyukov; A B Pevtsov; N V Sharenkova; J Sloan; L M Sorokin

doi:10.1088/0268-1242/16/2/101

Semiconductor Science and Technology

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Fabrication and structure of an opal-gallium nitride nanocomposite

V Yu Davydov¹, R E Dunin-Borkovski², V G Golubev¹, J L Hutchison², N F Kartenko¹, D A Kurdyukov¹, A B Pevtsov¹, N V Sharenkova¹, J Sloan³ and L M Sorokin¹

Published under licence by IOP Publishing Ltd
Semiconductor Science and Technology, Volume 16, Number 2 Citation V Yu Davydov et al 2001 Semicond. Sci. Technol. 16 L5 DOI 10.1088/0268-1242/16/2/101

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Author affiliations

¹ Ioffe Physico-Technical Institute, RAS, 194021 St Petersburg, Russia

² Department of Materials, Oxford University, Parks Road, Oxford OX1 3PH, UK

³ Wolfson Catalysis Centre, Inorganic Chemistry Laboratory, Oxford OX1 3QR, UK

Dates

Received 3 October 2000
Accepted 5 December 2000

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Abstract

A three-dimensional gallium nitride lattice has been synthesized within the void sublattice of an artificial opal. The composite structure has been characterized using X-ray diffraction, Raman spectroscopy and transmission electron microscopy.

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