Abstract
Raman microscopy has been used for a direct comparison between furnace- and laser-annealing techniques on polysilicon, and also between phosphorus-implanted and non-implanted polysilicon samples. Variations occurring as a result of different annealing temperatures and energies have been analysed and compared to optical reflectivity data. Measurements have also been carried out to determine the uniformity and extent of anneal produced by laser annealing, and hence the success of this alternative annealing technique. It has been shown that furnace-annealed polysilicon has structural properties most closely resembling those of single-crystal silicon, with large stresses being induced in the laser annealed material.
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