Review

Advances and prospects in nitrides based light-emitting-diodes*

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© 2016 Chinese Institute of Electronics
, , Citation Li Jinmin et al 2016 J. Semicond. 37 061001 DOI 10.1088/1674-4926/37/6/061001

1674-4926/37/6/061001

Abstract

Due to their low power consumption, long lifetime and high efficiency, nitrides based white light-emitting-diodes (LEDs) have long been considered to be a promising technology for next generation illumination. In this work, we provide a brief review of the development of GaN based LEDs. Some pioneering and significant experiment results of our group and the overview of the recent progress in this field are presented. We hope it can provide some meaningful information for the development of high efficiency GaN based LEDs and solid-state-lighting.

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Footnotes

10.1088/1674-4926/37/6/061001