Growth and properties of GaxAl1-xN compounds

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, , Citation J Hagen et al 1978 J. Phys. C: Solid State Phys. 11 L143 DOI 10.1088/0022-3719/11/4/005

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1 Univ. of Bath, Bath, UK

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0022-3719/11/4/L143

Abstract

Thin films of alloys in the GaxAl1-xN system have been prepared by vapour phase deposition onto sapphire substrates. The absorption edge and highest cathodoluminescence peak energies vary smoothly through the range with some bowing.

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10.1088/0022-3719/11/4/005