A chemical method for tin disulphide thin film deposition

Thin films of tin disulphide (SnS₂) have been chemically deposited for the first time from an acidic bath, using sodium thiosulphate (Na₂S₂O₃) as a sulphur source, onto glass, tin oxide-coated glass and titanium substrates. Their electrical, optical and photoelectrochemical properties have been studied. The chemically deposited SnS₂ films are n-type semiconductors and the optical band gap is 2.35 eV. The room temperature resistivity is of the order of 10³-10⁴ Omega cm. As-deposited SnS₂ films showed photovoltaic activity.