Low-temperature growth of vanadium pentoxide thin films produced by pulsed laser ablation

Vanadium pentoxide (V₂O₅) thin films have been produced by pulsed laser deposition. AFM, Raman, optical and electrical measurements have been made on the films in order to understand the growth mechanism of laser ablated V₂O₅ thin films. The investigations revealed the growth of stoichiometric and high-quality V₂O₅ thin films at low substrate temperatures. The optical band gap and the electrical conductivity of V₂O₅ thin films grown at a temperature of 200 °C at an oxygen partial pressure of 100 mTorr are 2.35 eV and 10^-4 S cm^-1, respectively.