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J F Verwey1, E A Amerasekera1 and J Bisschop1
Published under licence by IOP Publishing Ltd
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Citation J F Verwey et al 1990 Rep. Prog. Phys. 53 1297
DOI 10.1088/0034-4885/53/10/002
The physics of silicon dioxide layers, with thicknesses below 100 nm, are presented in a review which focuses on the developments in the 1980s. The study deals with the whole range of SiO2 properties and behaviour, beginning with oxidation kinetics and the physical structure of SiO2, and ending with oxide breakdown and reliability test methods.
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