Abstract
Zinc oxide (ZnO) single crystals are grown by the modified vertical Bridgman method using a PbF2 flux. The maximum size of the as-grown ZnO crystal is about ϕ25 mm×5 mm. The transmittance of the as-grown ZnO crystal is more than 70% in the range of 600–800 nm and the optical band gap is estimated to be 3.21 eV. The photoluminescence spectrum indicates that the as-grown ZnO crystal has a very low concentration of native defects and is much closed to its stoichiometry. The electrical measurement exhibits that the ZnO crystal has low electrical resistivity of 0.02394 Ωcm−1 and a high carrier concentration of 2.10×1018 cm−3.