CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices

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2011 Chinese Physical Society and IOP Publishing Ltd
, , Citation Li Zhe-Yang et al 2011 Chinese Phys. Lett. 28 098101 DOI 10.1088/0256-307X/28/9/098101

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1 Jiangsu Provincial Key Lab of Advance Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093

2 National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016

3 TanKeBlue Semiconductor CO., Ltd., Beijing 100190

Dates

  1. Received 24 March 2011
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0256-307X/28/9/098101

Abstract

Homo-epitaxial layers are successfully grown on Si-face 4° off-axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system. The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature. Schottky diodes fabricated on the epilayer present a typical I—V characteristic. This is the first report of Schottky diodes fabricated on 4° off-axis 4H-SiC substrates made in China.

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