Abstract
The coupling efficiencies of sputtered, c-axis-orientated zinc oxide (ZnO) films in guided wave resonance optical modulators have been measured. The ZnO planar waveguide is sandwiched between two 3 nm thick chromium layers on top of a SiO2/Si(100) substrate. This novel design facilitates application of a modulation voltage directly across the dielectric film in a prism coupler set-up and thus avoids voltage losses across the silicon dioxide (SiO2) optical isolation layer. We present a comparison of four differently prepared ZnO waveguides/modulators to investigate the influence of film crystallinity on the coupling efficiency and electro-optical parameters. The coupling efficiency of a ZnO waveguide is found to be dependent on both film thickness and average grain diameter measured in the plane of the film. A high efficiency (0.76) can be achieved for film thicknesses below 300 nm when the average grain diameter is 26 nm. This value is comparable to the maximum value of typically around 0.81 expected from model calculations for uniform couplers.
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