Abstract
A dual-phase-lag diffusion (DPLD) model, which extends Fick's law by including two lagging times, j for the mass flux vector and for the density gradient, is developed to predict thin film growth. Depending upon the phase lag ratio / j , the DPLD model uniquely characterizes four types of growth kinetics as reported in the literature. The model validation with experimental data of silicon oxidation and Hg1-x Cdx Te film deposition demonstrates that the present model captures the anomalous behaviour of thin film growth from the very beginning of the process to relatively long times very well.
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