Studies of the photovoltaic behaviour of indium tin oxide (ITO)/silicon junctions prepared by the reactive thermal evaporation technique

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, , Citation A Subrahmanyam and N Balasubramanian 1992 Semicond. Sci. Technol. 7 324 DOI 10.1088/0268-1242/7/3/007

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1 Dept. of Phys., Indian Inst. of Technol., Madras, India

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0268-1242/7/3/324

Abstract

Indium tin oxide (ITO)/silicon (n and p, crystalline) junctions have been prepared by the reactive thermal evaporation technique. The photovoltaic properties of these junctions are studied as functions of process temperature (170-320 degrees C). A maximum efficiency of 3.26% has been obtained (100 mW cm-2 illumination produced by a GE-ELH lamp) at 250 degrees C for both ITO/n-Si and ITO/p-Si junctions. An attempt has been made to understand the results on the basis of a thin insulating oxide interface layer.

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10.1088/0268-1242/7/3/007