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Comparison of the thermal stabilities of NiSi films in Ni/Si, Ni/Pd/Si and Ni/Pt/Si systems

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Published 17 March 2003 • Published under licence by IOP Publishing Ltd
, , Citation R N Wang and J Y Feng 2003 J. Phys.: Condens. Matter 15 1935 DOI 10.1088/0953-8984/15/12/310

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1 Key Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China

2 Author to whom any correspondence should be addressed.

Dates

  1. Received 20 November 2002
  2. Published

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0953-8984/15/12/1935

Abstract

The effects of different interlayer materials (Pd and Pt) deposited between Ni films and Si substrates on the NiSi thermal stability are discussed. Ni0.943Pd0.057Si and Ni0.945Pt0.055Si solid solutions were formed when the samples were annealed at high temperatures and the lattice parameters of Ni0.943Pd0.057 Si were calculated according to Vegard's law. The NiSi thermal stability was enhanced by interposing a Pd or Pt interlayer, and the sample with the Pt interlayer had the highest NiSi thermal stability among all the samples studied. This is attributed to the reduction of the interface energy between NiSi and Si substrates and the decrease of the driving force for the nucleation of NiSi2, induced by formation of the NiSi(200) preferred orientation and the solid solution respectively.

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10.1088/0953-8984/15/12/310