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Single photon emission from silicon-vacancy colour centres in chemical vapour deposition nano-diamonds on iridium

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Published 21 February 2011 Published under licence by IOP Publishing Ltd
, , Citation Elke Neu et al 2011 New J. Phys. 13 025012 DOI 10.1088/1367-2630/13/2/025012

1367-2630/13/2/025012

Abstract

We introduce a process for the fabrication of high-quality, spatially isolated nano-diamonds on iridium via microwave-plasma-assisted chemical vapour deposition (CVD) growth. We perform spectroscopy of single silicon-vacancy (SiV) centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcps at saturation make these SiV centres the brightest diamond-based single photon sources to date. We measure for the first time the fine structure of a single SiV centre, thus confirming the atomic composition of the investigated colour centres.

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