Abstract
Cu2ZnSnS4 (CZTS) films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400 °C for 30 min using nitrogen as the protective gas. It is found that the CZTS film synthesized at Cu/(Zn+Sn)=0.71 has a kesterite structure, a bandgap of about 1.51 eV, and an absorption coefficient of the order of 104 cm−1. This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.