SEMICONDUCTOR MATERIALS

Physical properties of sprayed antimony doped tin oxide thin films: The role of thickness

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2011 Chinese Institute of Electronics
, , Citation A. R. Babar et al 2011 J. Semicond. 32 053001 DOI 10.1088/1674-4926/32/5/053001

1674-4926/32/5/053001

Abstract

Transparent conducting antimony doped tin oxide (Sb:SnO2) thin films have been deposited onto preheated glass substrates using a spray pyrolysis technique by varying the quantity of spraying solution. The structural, morphological, X-ray photoelectron spectroscopy, optical, photoluminescence and electrical properties of these films have been studied. It is found that the films are polycrystalline in nature with a tetragonal crystal structure having orientation along the (211) and (112) planes. Polyhedrons like grains appear in the FE-SEM images. The average grain size increases with increasing spraying quantity. The compositional analysis and electronic behaviour of Sb:SnO2 thin films were studied using X-ray photoelectron spectroscopy. The binding energy of Sn3d5/2 for all samples shows the Sn4+ bonding state from SnO2. An intensive violet luminescence peak near 395 nm is observed at room temperature due to oxygen vacancies or donor levels formed by Sb5+ ions. The film deposited with 20 cc solution shows 70 % transmittance at 550 nm leading to the highest figure of merit (2.11 × 10−3Ω−1). The resistivity and carrier concentration vary over 1.22 × 10−3 to 0.89 × 10−3Ω·cm and 5.19 × 1020 to 8.52 × 1020 cm−3, respectively.

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10.1088/1674-4926/32/5/053001