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CMOS RF Band-Pass Filter Design Using the High Quality Active Inductor
Kung-Hao LIANG Chien-Chih HO Chin-Wei KUO Yi-Jen CHAN
Publication
IEICE TRANSACTIONS on Electronics
Vol.E88-C
No.12
pp.2372-2376 Publication Date: 2005/12/01 Online ISSN:
DOI: 10.1093/ietele/e88-c.12.2372 Print ISSN: 0916-8516 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: CMOS, active inductor, qualify-factor, active band-pass filter,
Full Text: PDF(700.2KB)>>
Summary:
A high quality-factor of active inductor has been implemented by using the 0.18 µm 1P6M CMOS technologies in this work. By adding a feedback resistance and a regulated gain stage transistor into the conventional cascade-grounded approach, the quality-factor and performance of CMOS active inductor can be improved. This novel active inductor demonstrated a maximum quality-factor of 540 and a 3.2 nH inductance at 4.3 GHz, where the self-resonant frequency was 5.4 GHz. An active CMOS bandpass filter was also fabricated including this tunable high quality factor active inductor, performing an insertion loss of 0.2 dB and a return loss more than 32 dB with a tuning range from 3.45 GHz to 3.6 GHz. The input IP3 was -2.4 dBm, and the noise figure was 14.1 dB with a 28 mW dc power consumption.
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