Generalized Scaling Law for Exciton Binding Energy in Two-Dimensional Materials

S. Ahmad, M. Zubair, O. Jalil, M. Q. Mehmood, U. Younis, X. Liu, K. W. Ang, and L. K. Ang
Phys. Rev. Applied 13, 064062 – Published 25 June 2020
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Abstract

Binding energy calculation in two-dimensional (2D) materials is crucial in determining their electronic and optical properties pertaining to enhanced Coulomb interactions between charge carriers due to quantum confinement and reduced dielectric screening. Based on full solutions of the Schrödinger equation in a screened hydrogen model with a modified Coulomb potential (1/rβ2), we present a generalized and analytical scaling law for the exciton binding energy, Eβ=E0(aβb+c)(μ/ϵ2), where β is a fractional-dimension parameter that accounts for the reduced dielectric screening. The model is able to provide accurate binding energies, benchmarked using the reported Bethe-Salpeter equation and experimental data, for 58 monolayer 2D and eight bulk materials, respectively, through β. For a given material, β is varied from β=3 for bulk three-dimensional materials to a value lying in the range 2.55–2.7 for 2D monolayer materials. With βmean=2.625, our model improves the average relative mean square error by a factor of 3 in comparison to existing models. The results can be used for Coulomb engineering of exciton binding energies in the optimal design of 2D materials.

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  • Received 30 January 2020
  • Revised 30 March 2020
  • Accepted 22 May 2020

DOI:https://doi.org/10.1103/PhysRevApplied.13.064062

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

S. Ahmad1,§, M. Zubair2,*,§, O. Jalil1, M. Q. Mehmood2, U. Younis1,3,†, X. Liu3, K. W. Ang4, and L. K. Ang5,‡

  • 1Electrical Engineering Department, Information Technology University (ITU) of the Punjab, Lahore 54000, Pakistan
  • 2NanoTech Lab, Electrical Engineering Department, Information Technology University (ITU) of the Punjab, Lahore 54000, Pakistan
  • 3College of Materials Science and Engineering, Shenzhen Key Laboratory of Microscale Optical Information Technology, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, 3688 Nanhai Avenue, Shenzhen 518060, People’s Republic of China
  • 4Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
  • 5Science and Math Cluster, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore

  • *muhammad.zubair@itu.edu.pk
  • usman.younis@itu.edu.pk
  • ricky_ang@sutd.edu.sg
  • §These authors contributed equally to this work.

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Vol. 13, Iss. 6 — June 2020

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