Experimental Realization of an Epsilon-Near-Zero Graded-Index Metalens at Terahertz Frequencies

Victor Pacheco-Peña, Nader Engheta, Sergei Kuznetsov, Alexandr Gentselev, and Miguel Beruete
Phys. Rev. Applied 8, 034036 – Published 29 September 2017

Abstract

The terahertz band has been historically hindered by the lack of efficient generators and detectors, but a series of recent breakthroughs have helped to effectively close the “terahertz gap.” A rapid development of terahertz technology has been possible thanks to the translation of revolutionary concepts from other regions of the electromagnetic spectrum. Among them, metamaterials stand out for their unprecedented ability to control wave propagation and manipulate electromagnetic response of matter. They have become a workhorse in the development of terahertz devices such as lenses, polarizers, etc., with fascinating features. In particular, epsilon-near-zero (ENZ) metamaterials have attracted much attention in the past several years due to their unusual properties such as squeezing, tunneling, and supercoupling where a wave traveling inside an electrically small channel filled with an ENZ medium can be tunneled through it, reducing reflections and coupling most of its energy. Here, we design and experimentally demonstrate an ENZ graded-index (GRIN) metamaterial lens operating at terahertz with a power enhancement of 16.2 dB, using an array of narrow hollow rectangular waveguides working near their cutoff frequencies. This is a demonstration of an ENZ GRIN device at terahertz and can open the path towards other realizations of similar devices enabling full quasioptical processing of terahertz signals.

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  • Received 10 April 2017

DOI:https://doi.org/10.1103/PhysRevApplied.8.034036

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Interdisciplinary Physics

Authors & Affiliations

Victor Pacheco-Peña1,2, Nader Engheta2, Sergei Kuznetsov3,4,5, Alexandr Gentselev5, and Miguel Beruete1,6,*

  • 1Antennas Group-TERALAB, Universidad Pública de Navarra, Campus Arrosadía, 31006 Pamplona, Spain
  • 2Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
  • 3Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk Branch “TDIAM,” Lavrentiev Avenue 2/1, Novosibirsk 630090, Russian Federation
  • 4Novosibirsk State University, Pirogova Street 2, 630090 Novosibirsk, Russian Federation
  • 5Budker Institute of Nuclear Physics SB RAS, Lavrentiev Avenue 11, 630090 Novosibirsk, Russian Federation
  • 6Institute of Smart Cities, Public University of Navarra, 31006 Pamplona, Spain

  • *Corresponding author. miguel.beruete@unavarra.es

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Vol. 8, Iss. 3 — September 2017

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