Study of the long-wavelength optic phonons in Ga1xAlxSb

G. Lucovsky, K. Y. Cheng, and G. L. Pearson
Phys. Rev. B 12, 4135 – Published 15 November 1975
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Abstract

We have studied the ir reflectance spectra of epitaxially grown layers of Ga1xAlxSb and have found two-mode behavior for the long-wavelength optic phonons. We have analyzed the compositional variation in the TO-phonon frequencies using force constants derived from the random-element-isodisplacement model. We find that the data are well described by a force-constant model that includes six parameters, three force constants each with a different compositional dependence. For comparison, we have also analyzed the data using other force-constant representations including four-parameter models in which the same compositional dependence is assumed for each of the forces.

  • Received 31 March 1975

DOI:https://doi.org/10.1103/PhysRevB.12.4135

©1975 American Physical Society

Authors & Affiliations

G. Lucovsky

  • Xerox Palo Alto Research Center, Palo Alto, California 94304

K. Y. Cheng and G. L. Pearson

  • Standord Electronics Laboratories, Stanford University, Stanford, California 94305

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Vol. 12, Iss. 10 — 15 November 1975

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