The results of Raman scattering and infrared reflectivity measurements on the IV-VI layer-type semiconductors SnS and SnSe are presented. The infrared-active TO, the associated LO-phonon frequencies, and the dielectric constants for all three principal polarizations have been determined from a Kramers-Kronig analysis of the reflectivity data. The symmetries of the zone-center phonons observed in the different polarization configurations are in agreement with the group-theoretical analysis of the $D_{2h}^{16}$ space group of these compounds. Despite the center of inversion symmetry in this structure, some infrared- and Raman-active modes are found to be nearly degenerate, suggesting the importance of the layerlike character in these compounds as in the isomorphic GeS and GeSe. A comparison of the phonon frequencies of the corresponding modes in the spectra of SnS and SnSe, or GeS and GeSe, indicates that the frequencies vary as a power (-2.2) of the lattice constant.

• Received 7 October 1976

DOI:https://doi.org/10.1103/PhysRevB.15.2177