Excitons and biexcitons in semiconductor quantum wires

Ladislaus Bányai, Ian Galbraith, Claudia Ell, and Hartmut Haug
Phys. Rev. B 36, 6099 – Published 15 October 1987
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Abstract

The exciton and biexciton ground-state binding energies are calculated for semiconductor quantum wires of radius R smaller than the bulk exciton radius a0 assuming an infinite confining potential. Both the excitonic and biexcitonic (molecular) binding energies are enhanced by a factor greater than 5 for GaAs/Ga1xAlxAs quantum wires of radius approximately a0/2. The simultaneous shrinking of the exciton size with the wire radius is shown to reduce the contribution (when compared with the quasi-two-dimensional case) of dielectric polarization effects which arise when the wire is embedded in a cladding with a lower dielectric constant.

  • Received 2 April 1987

DOI:https://doi.org/10.1103/PhysRevB.36.6099

©1987 American Physical Society

Authors & Affiliations

Ladislaus Bányai, Ian Galbraith, Claudia Ell, and Hartmut Haug

  • Institut für Theoretische Physik, Universität Frankfurt, Robert-Mayer-Strasse 8-10, D-6000 Frankfurt am Main 1, West Germany

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Issue

Vol. 36, Iss. 11 — 15 October 1987

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