Calculations of the effect of charged native defects on carrier mobility in semiconductors are presented. The concentrations of native defects are calculated within the framework of the recently proposed amphoteric-native-defect model. The model provides a simple rule for identification of semiconductor systems in which defect scattering is important. It is shown that native-defect scattering is a dominant mechanism limiting electron mobilities in heavily doped n-type GaAs. It is also shown that native defects do not play any significant role in p-type GaAs.

• Received 27 December 1989

DOI:https://doi.org/10.1103/PhysRevB.41.10218