Electronic properties of cubic and hexagonal SiC polytypes from ab initio calculations

P. Käckell, B. Wenzien, and F. Bechstedt
Phys. Rev. B 50, 10761 – Published 15 October 1994
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Abstract

Ab initio total-energy studies are used to determine the lattice constants and the atomic positions within the unit cells for 3C-, 6H-, 4H-, and 2H-SiC. The electronic structures are calculated for the atomic geometries obtained theoretically within the density-functional theory (DFT) and the local-density approximation (LDA). We state more precisely the ordering of the conduction-band minima and derive effective masses. By adding quasiparticle corrections to the DFT-LDA band structures we find indirect fundamental energy gaps in agreement with the experiment. A physical explanation of the empirical Choyke-Hamilton-Patrick relation is given. Band discontinuities, bandwidths, crystal-field splittings, and ionic gaps are discussed versus hexagonality.

  • Received 21 April 1994

DOI:https://doi.org/10.1103/PhysRevB.50.10761

©1994 American Physical Society

Authors & Affiliations

P. Käckell, B. Wenzien, and F. Bechstedt

  • Friedrich-Schiller-Universität, Institut für Festkörpertheorie und Theoretische Optik, Max-Wien-Platz 1, 07743 Jena, Germany

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Vol. 50, Iss. 15 — 15 October 1994

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