The melting behavior of 0.1–10-nm-thick discontinuous indium films formed by evaporation on amorphous silicon nitride is investigated by an ultrasensitive thin-film scanning calorimetry technique. The films consist of ensembles of nanostructures for which the size dependence of the melting temperature and latent heat of fusion are determined. The relationship between the nanostructure radius and the corresponding melting point and latent heat is deduced solely from experimental results (i.e., with no assumed model) by comparing the calorimetric measurements to the particle size distributions obtained by transmission electron microscopy. It is shown that the melting point of the investigated indium nanostructures decreases as much as 110 K for particles with a radius of 2 nm. The experimental results are discussed in terms of existing melting point depression models. Excellent agreement with the homogeneous melting model is observed.

• Received 5 April 2000

DOI:https://doi.org/10.1103/PhysRevB.62.10548