In this paper we report on the electronic, elastic, and thermal properties of ${\mathrm{Ti}}_3{\mathrm{Si}}_{1-x}{\mathrm{Ge}}_x{\mathrm{C}}_2$. The conductivities, Hall coefficients, and magnetoresistances are analyzed within a two-band framework assuming temperature-independent charge carrier concentrations. In this framework, ${\mathrm{Ti}}_3{\mathrm{Si}}_{1-x}{\mathrm{Ge}}_x{\mathrm{C}}_2$ is shown to be a compensated material, i.e., the concentration of electrons is nearly equal to that of the holes. Aside from effects of solid solution scattering at low temperature, there appears to be surprisingly little effect on any of the physical properties due to $\mathrm{Ge}$ substitution, with the exception of the thermal expansion, which is smallest in $x=1$.

• Received 18 December 2003

DOI:https://doi.org/10.1103/PhysRevB.70.085104