Nanoelectromechanics of piezoresponse force microscopy

Sergei V. Kalinin, Edgar Karapetian, and Mark Kachanov
Phys. Rev. B 70, 184101 – Published 1 November 2004

Abstract

To achieve quantitative interpretation of piezoresponse force microscopy (PFM), including resolution limits, tip bias- and strain-induced phenomena and spectroscopy, analytical representations for tip-induced electroelastic fields inside the material are derived for the cases of weak and strong indentation. In the weak indentation case, electrostatic field distribution is calculated using an image charge model. In the strong indentation case, the solution of the coupled electroelastic problem for piezoelectric indentation is used to obtain the electric field and strain distribution in the ferroelectric material. This establishes a complete continuum mechanics description of the PFM contact mechanics and imaging mechanism. The electroelastic field distribution allows signal generation volume in PFM to be determined. These rigorous solutions are compared with the electrostatic point-charge and sphere-plane models, and the applicability limits for asymptotic point-charge and point-force models are established. The implications of these results for ferroelectric polarization switching processes are analyzed.

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  • Received 19 December 2003

DOI:https://doi.org/10.1103/PhysRevB.70.184101

©2004 American Physical Society

Authors & Affiliations

Sergei V. Kalinin*

  • Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

Edgar Karapetian

  • Department of Mathematics & Computer Science, Suffolk University, Boston, Massachusetts 02114, USA

Mark Kachanov

  • Department of Mechanical Engineering, Tufts University, Medford, Massachusetts 02155, USA

  • *E-mail address: sergei2@ornl.gov
  • E-mail address: karap@comcast.net
  • E-mail address: mark.kachanov@tufts.edu

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Issue

Vol. 70, Iss. 18 — 1 November 2004

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