We present a theoretical study of the electron effective mass in ${\mathrm{Ga}}_{1-y}{\mathrm{In}}_y{\mathrm{N}}_x{\mathrm{As}}_{1-x}∕\mathrm{GaAs}$ quantum well (QW) structures. The calculations are based on a $10\times 10\mathbf{k}\bullet \mathbf{p}$ band anticrossing Hamiltonian, incorporating valence, conduction, and nitrogen-induced bands. The results are tested by comparison with the experimentally determined electron effective mass in QWs with indium composition in the range between 10% and 50%, and nitrogen concentration between 1% and 5%. We report good agreement with experiment, confirming that the enhanced electron effective mass observed in the ${\mathrm{Ga}}_{1-y}{\mathrm{In}}_y{\mathrm{N}}_x{\mathrm{As}}_{1-x}$ QW structures considered can be fully accounted for using the band anticrossing model.

• Received 1 November 2004

DOI:https://doi.org/10.1103/PhysRevB.71.233301