Diamond nucleation by energetic pure carbon bombardment

Y. Yao, M. Y. Liao, Th. Köhler, Th. Frauenheim, R. Q. Zhang, Z. G. Wang, Y. Lifshitz, and S. T. Lee

Phys. Rev. B 72, 035402 – Published 1 July 2005

Abstract

Deposition of $1000 eV$ pure carbon ions onto Si(001) held at $800 ° C$ led to direct nucleation of diamond crystallites, as proven by high-resolution transmission electron microscopy and electron energy loss spectroscopy. Molecular dynamic simulations show that diamond nucleation in the absence of hydrogen can occur by precipitation of diamond clusters in a dense amorphous carbon matrix generated by subplantation. Once the diamond clusters are formed, they can grow by thermal annealing consuming carbon atoms from the amorphous matrix. The results are applicable to other materials as well.

Received 24 February 2005

DOI:https://doi.org/10.1103/PhysRevB.72.035402

Authors & Affiliations

Y. Yao¹, M. Y. Liao^1,2, Th. Köhler^1,3, Th. Frauenheim^1,3, R. Q. Zhang^1,4, Z. G. Wang², Y. Lifshitz^1,5,*, and S. T. Lee^1,†

¹Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
²Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
³Physik Department, Universität Paderborn, D-33098 Paderborn, Germany
⁴Nano-organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, Chinese Academy of Science, Beijing 100101, China
⁵Deptartment of Materials Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel

^*Corresponding author. Electronic address: apshay@cityu.edu.hk
^†Corresponding author. Electronic address: appannale@cityu.edu.hk

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Vol. 72, Iss. 3 — 15 July 2005

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