Aging behavior in single-domain Mn-doped BaTiO3 crystals: Implication for a unified microscopic explanation of ferroelectric aging

Lixue Zhang and Xiaobing Ren
Phys. Rev. B 73, 094121 – Published 24 March 2006

Abstract

The change of ferroelectric, dielectric, and piezoelectric properties with time, the ferroelectric aging phenomena, has been observed in most ferroelectrics. Phenomenologically, aging can be attributed to the gradual stabilization of ferroelectric domains by defects, but the microscopic origin of the domain stabilization has remained controversial. It is unclear whether the domain stabilization is a boundary effect (caused by domain-wall-pinning) or a volume effect (stabilization of the whole domain). In the present paper, we made a single-domain (domain-wall-free) Mn-doped BaTiO3 single crystal and studied the aging behavior of its hysteresis loop. We found that after aging, the single-domain sample shows a significant increase in the coercive field, clearly indicating a strong stabilization of the single domain. Furthermore, the sample exhibits an abnormal double hysteresis loop, which corresponds to an interesting reversible domain switching process. These are direct evidence for the stabilization of single domain by aging. Our results preclude any explanation by the domain-wall-pinning effect and strongly suggest that the volume effect is the governing mechanism for the aging in hysteresis loop. We further show that the microscopic origin of the volume effect comes naturally from a general symmetry-conforming property of point defects. Such a microscopic mechanism can explain not only the aging in hysteresis loop (large signal aging) but also the aging in dielectric and piezoelectric constants (small signal aging), thus providing a unified microscopic explanation for all kinds of ferroelectric aging.

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  • Received 31 October 2005

DOI:https://doi.org/10.1103/PhysRevB.73.094121

©2006 American Physical Society

Authors & Affiliations

Lixue Zhang1,2,3 and Xiaobing Ren1,2,*

  • 1Multi-Disciplinary Materials Research Center, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China
  • 2Materials Physics Group, National Institute for Materials Science, Tsukuba, 305-0047 Ibaraki, Japan
  • 3State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China

  • *Corresponding author. Electronic mail: ren.xiaobing@nims.go.jp

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Vol. 73, Iss. 9 — 1 March 2006

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